| PART |
Description |
Maker |
| 2SC4617T1G |
NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
|
| MMBT3416LT3_D MMBT3416LT3 ON2117 MMBT3416L MMBT341 |
General Purpose Amplifier NPN Silicon
Transistor SSP NPN
From old datasheet system
General Purpose Amplifier(NPN Silicon)
QENERAL PURPOSE AMPLLFLER
|
Motorola, Inc
ONSEMI[ON Semiconductor]
|
| CD9014C CD9014D CD9014D1 CD9014D3 CD9014E CD9014D2 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 200 - 600 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 100 - 300 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 150 hFE
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.100A Ic, 60 - 1000 hFE
NPN SILICON PLANAR TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| BC817-25-AE3-R BC817-40-AE3-R BC856-A-AE3-R BC817 |
NPN GENERAL PURPOSE AMPLIFIER npn型通用放大
NPN GENERAL PURPOSE AMPLIFIER 1500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
|
UNISONIC TECHNOLOGIES CO LTD
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Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| MSD1819A-T1_D ON2377 MSD1819A-RT1 MSD1819A-RT3 |
General Purpose Amplifier Transistor NPN
From old datasheet system
NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
|
ON Semiconductor
|
| P82-D-18C P82-D-8C P03-26 P03-20 P03-37 P03-23 P03 |
1 ELEMENT, 43000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 15000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 200000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 24000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 150000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4300 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 86000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 175000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 12500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 5000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 17500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2400 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 300 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 8600 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7500 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 150 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 30000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 7200 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 10000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 50000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 100000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 2000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 3000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 6000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 40000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 600 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 60 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 4000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 12000 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR
|
ITT Interconnect Solutions
|
| EMX1DXV6T5G EMX1DXV6T1G EMX1DXV6T1 |
Dual NPN General Purpose Amplier Transistor
Dual NPN General Purpose Amplifier Transistor
|
ON Semiconductor
|
| 2N3904CSM |
GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
General Purpose NPN Transistor In a Hermetic Surface Mount Package For High Reliability Application(通用NPN晶体管（高可靠性、表贴型封装
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 2SC4695 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-236 晶体管|晶体管|叩| 20V的五（巴西）总裁| 500mA的一（c）|36
NPN Epitaxial Planar Silicon Transistor for Low-Frequency General-Purpose Amplifier,Muting Applications(低频通用放大器，噪声抑制应用的NPN硅外延平面型晶体
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting Applications
|
Hitachi,Ltd.
Sanyo Electric Co.,Ltd.
|
| KSH31 KSH31C KSH31CTF KSH31TF |
NPN Epitaxial Silicon Transistor
General Purpose Amplifier Low Speed Switching Applications 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
|
